BSP121 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1998 Apr 01

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP121

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Drain-source breakdown voltage

ID =10 µA; VGS =0

V(BR)DSS

min.

200 V

Drain-source leakage current

VDS = 160 V; VGS =0

IDSS

max.

1.0

µA

VDS = 60 V; VGS =0

IDSS

max.

200 nA

Gate-source leakage current

± VGS = 20 V; VDS =0

±IGSS

max.

100 nA

Gate threshold voltage

min.

max.

0.8

2.8

ID = 1 mA; VDS = VGS

VGS(th)

Drain-source on-resistance

typ.

max.

4.5

6.0

Ω

ID = 400 mA; VGS = 10 V

RDS(on)

Transfer admittance

min.

typ.

200

350

ID = 400 mA; VDS = 25 V

 Yfs 

Input capacitance at f = 1 MHz

typ.

max.

VDS = 25 V; VGS =0

Ciss

Output capacitance at f = 1 MHz

typ.

max.

VDS = 25 V; VGS =0

Coss

Feedback capacitance at f = 1 MHz

typ.

max.

3.5

VDS = 25 V; VGS =0

Crss

Switching times (see Figs 2 and 3)

typ.

max.

ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V

ton

toff

typ.

max.

BSP121 Datasheet(PDF) 4 Page - NXP Semiconductors

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