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FFSP2065B Datasheet(PDF) 1 Page - ON Semiconductor

Part # FFSP2065B
Description  Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FFSP2065B Datasheet(HTML) 1 Page - ON Semiconductor

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DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
January, 2023 − Rev. 2
1
Publication Order Number:
FFSP2065B/D
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
20 A, 650 V, D2, TO-220-2L
FFSP2065B
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
• Max Junction Temperature 175°C
• Avalanche Rated 94 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuit
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Peak Repetitive Reverse Voltage
650
V
EAS
Single Pulse Avalanche Energy (Note 1)
94
mJ
IF
Continuous Rectified Forward Current @
TC < 141°C
20
A
Continuous Rectified Forward Current @
TC < 135°C
22.5
IF, Max Non−Repetitive Peak
Forward Surge Current
TC = 25°C, 10 ms
882
A
TC = 150°C, 10 ms
798
IF, SM Non−Repetitive
Forward Surge Current
Half−Sine Pulse,
tp = 8.3 ms
84
A
Ptot
Power Dissipation
TC = 25°C
150
W
TC = 150°C
25
TJ, TSTG Operating and Storage Temperature Range −55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. EASof 94 mJ is based on starting TJ= 25°C, L = 0.5 mH, IAS= 19.4 A, V = 50 V.
MARKING DIAGRAM
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
TO−220−2LD
CASE 340BB
ELECTRICAL CONNECTION
1. Cathode
2. Anode
1
2
FFSP2065B
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
ZZ
= Assembly Lot Code
FFSP
2065B
AYWWZZ


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