PDTC123EEF datasheet(2/14 Pages) PHILIPS

2 / 14 page

2004 Aug 06

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistors;

R1 = 2.2 k

Ω, R2 = 2.2 kΩ

PDTC123E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

VCEO

collector-emitter

voltage

−

output current (DC)

−

100

bias resistor

2.2

−

Ω

bias resistor

2.2

−

Ω

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

PNP COMPLEMENT

PHILIPS

EIAJ

PDTC123EE

SOT416

SC-75

PDTA123EE

PDTC123EEF

SOT490

SC-89

PDTA123EEF

PDTC123EK

SOT346

SC-59

PDTA123EK

PDTC123EM

SOT883

SC-101

PDTA123EM

PDTC123ES

SOT54 (TO-92)

SC-43

TC123E

PDTA123ES

PDTC123ET

SOT23

−

*26(1)

PDTA123ET

PDTC123EU

SOT323

SC-70

*48(1)

PDTA123EU

PDTC123EEF Datasheet(PDF) 2 Page - NXP Semiconductors

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