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C3D08060G Datasheet(PDF) 1 Page - WOLFSPEED, INC. |
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C3D08060G Datasheet(HTML) 1 Page - WOLFSPEED, INC. |
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1 / 6 page ![]() 1 C3D08060G Rev. H, 01-2018 C3D08060G Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V F Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Free Wheeling Diodes in Inverter stages • AC/DC converters Package TO-263-2 PIN 1 PIN 2 CASE Part Number Package Marking C3D08060G TO-263-2 C3D08060 Maximum Ratings (T C = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note V RRM Repetitive Peak Reverse Voltage 600 V V RSM Surge Peak Reverse Voltage 600 V V DC DC Blocking Voltage 600 V I F Continuous Forward Current 24 11 8 A T C=25˚C T C=135˚C T C=152˚C Fig. 3 I FRM Repetitive Peak Forward Surge Current 36.5 25.5 A T C=25˚C, tP = 10 ms, Half Sine Wave T C=110˚C, tP=10 ms, Half Sine Wave I FSM Non-Repetitive Peak Forward Surge Current 71 60 A T C=25˚C, tp = 10 mS, Half Sine Wave T C=110˚C, tP=10 ms, Half Sine Wave Fig. 8 I FSM Non-Repetitive Peak Forward Surge Current 650 530 A T C=25˚C, tP = 10 µs, Pulse T C=110˚C, tP = 10 µs, Pulse Fig. 8 P tot Power Dissipation 107 46.5 W T C=25˚C T C=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns V R=0-600V ∫i2dt i2t value 25 18 A2s T C=25˚C, tP=10 ms T C=110˚C, tP=10 ms T J , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C V RRM = 600 V I F (TC=135˚C) = 11 A Q c = 21 nC |
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