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Rev. 6, March 2023

C3D08065A

Electrical Characteristics

Parameter

Symbol

Typ.

Max.

Unit

Test Conditions

Notes

Forward Voltage

V

F

1.5

1.8

V

I

F = 8 A, Tj = 25 °C

Fig. 1

2.1

2.4

I

F = 8 A, Tj = 175 °C

Reverse Current

I

R

10

51

µ

A

V

R = 650 V, Tj = 25 °C

Fig. 2

12

204

V

R = 650 V, Tj = 175 °C

Total Capacitive Charge

Q

C

20

nC

V

R = 650 V, Tj = 25 °C

Fig. 5

Total Capacitance

C

395

pF

V

R = 0 V, Tj = 25 °C, f = 1 MHz

Fig. 6

37

V

R = 200 V, Tj = 25 °C, f = 1 MHz

32

V

R = 400 V, Tj = 25 °C, f = 1 MHz

Capacitance Stored Energy

E

C

3.0

µJ

V

R = 400 V

Fig. 7

Notes:

SiC Schottky Diodes are majority carrier devices, so there is no reverse recovery charge.

Thermal & Mechanical Characteristics

Parameter

Symbol

Value

Unit

Notes

Thermal Resistance, Junction to Case (Typical)

R

θ

, JC (TYP)

1.4

°C / W

Junction Temperature

T

j

-55 to +175

°C

Case & Storage Temperature

T

c

-55 to +175

TO-220 Mounting Torque

-

1

Nm

M3 Screw

8.8

lbf-in 6-32 Screw

Electrostatic Discharge (ESD) Classifications

Parameter

Symbol

Notes

Human Body Model

HBM

Class 3B (≥ 8000 V)

Class 3B (≥ 8000 V)

Charge Device Model

CDM

Class C3 (≥ 1000 V)

Class C3 (≥ 1000 V)