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C3M0060065D Datasheet(PDF) 7 Page - WOLFSPEED, INC.

Part # C3M0060065D
Description  Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode
PDF  11 Pages
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Manufacturer  WOLFSPEED [WOLFSPEED, INC.]
Direct Link  https://www.wolfspeed.com/
Logo WOLFSPEED - WOLFSPEED, INC.

C3M0060065D Datasheet(HTML) 7 Page - WOLFSPEED, INC.

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C3M0060065D Rev. 4, 02-2021
Typical Performance
0
5
10
15
20
25
30
35
40
-40
-15
10
35
60
85
110
135
160
Case Temperature, TC (°C)
Conditions:
TJ ≤ 175 °C
Conditions:
TJ ≤ 175 °C
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
1000
Drain-Source Voltage, VDS (V)
100 µs
10 µs
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
Limited by RDS On
1 µs
Figure 22. Safe Operating Area
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD = 400V)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating Vs
Case Temperature
Figure 24. Clamped Inductive Switching Energy vs. R
G(ext)
10E-3
100E-3
1
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
Time, tp (s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
0
20
40
60
80
100
120
140
160
-50
-25
0
25
50
75
100
125
150
175
Case Temperature, TC (°C)
Conditions:
TJ ≤ 175 °C
0
50
100
150
200
250
300
0
5
10
15
20
25
30
Drain to Source Current, IDS (A)
EOff
EOn
ETotal
Conditions:
TJ = 25 °C
VDD = 400 V
RG(ext) = 2.5 Ω
VGS = -4V/+15V
FWD = C3M0060065D
L = 135 μH
0
50
100
150
200
250
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
EOff
EOn
ETotal
Conditions:
TJ = 25 °C
VDD = 400 V
IDS = 13.2 A
VGS = -4V/+15 V
FWD = C3M0060065D
L = 135 μH



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