IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Pulse Width - Seconds

0.001

0.010

0.100

V

0

5

10

15

20

25

30

35

40

0

3000

6000

9000

12000

15000

18000

V

0.3

0.6

0.9

1.2

1.5

1.8

0

40

80

120

160

200

Gate Charge - nC

0

100

200

300

400

500

0

2

4

6

8

10

12

Vds=300V

I

I

C

RSS

C

OSS

C

ISS

V

I

I

f = 100KHz

T

T

Single Pulse

Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the

Intrinsic Diode

Figure 10. Transient Thermal Resistance

IXFN 130N30