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GF4435 Datasheet(PDF) 4 Page - General Semiconductor |
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GF4435 Datasheet(HTML) 4 Page - General Semiconductor |
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4 / 5 page ![]() 0 500 1000 3000 1500 2000 2500 3500 0 5 10 15 20 30 25 Fig. 8 – Capacitance Ciss Coss Crss 0 2 4 6 8 10 010 20 40 30 Fig. 7 – Gate Charge 50 60 VDS = --15V ID = --4.6A Qg -- Gate Charge (nC) --VDS -- Drain-to-Source Voltage (V) f = 1MHz VGS = 0V 1 0.1 0.01 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 --VSD -- Source-to-Drain Voltage (V) TJ = 125 °C 25 °C --55 °C Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 0 0.02 0.01 0.03 0.05 0.07 0.04 0.08 0.06 246 8 10 Fig. 6 – On-Resistance vs. Gate-to-Source Voltage --VGS -- Gate-to-Source Voltage (V) ID = -- 8.0A TJ = 125 °C TJ = 25 °C Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) GF4435 P-Channel Enhancement-Mode MOSFET |
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