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FDBL9401 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FDBL9401 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FDBL9401 DESCRIPTION · Drain Current –ID=300A@ TC=25℃ · Drain Source Voltage- VDSS= 40V(Min) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Synchronous Rectification in SMPS · Switching converters,motor driver,relay driver · Power Tools · UPS · Motor Control ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 300 A IDM Pulsed drain current @ TC=25℃ 1200 A EAS Avalanche Energy, Single Pulse ,L=0.4mH, TC=25℃ 1064 mJ PD Power Dissipation ,TC=25℃ 429 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.35 ℃ /W |
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