4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 04, 2023-06-27

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

GTRA360502M

Package PG-DFN-6.5x7-1

Description

The GTRA360502M houses two GaN-on-SiC power transistor for use in

asymmetric Doherty power amplifiers. The device has been designed

for use in communications infrastructure applications from 3,400 MHz to

3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers

a maximum, average output power of 8 watts.

Features

• GaN on SiC HEMT technology

• Asymmetrical Doherty design

- Main: P3dB = 20 W Typ

- Peak: P3dB = 36 W Typ

• Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs

bandwidth, 10% duty cycle (Doherty configuration)

- Output power at P3dB = 50 W

- Drain efficiency = 62% @ 50 W

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Pb-free and RoHS compliant

• Low thermal resistance

GTRA360502M

Thermally-Enhanced High Power RF GaN on SiC HEMT

50 W, 48 V, 3400 – 3800 MHz

0

10

20

30

40

50

60

3

6

9

12

15

18

21

18

23

28

33

38

43

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48V, IDQ = 25 mA, VGS(PEAK) = –4.9 V,

= 3600 MHz

3GPP WCDMA signal

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g360502m-gr1a

RF Characteristics

Typical RF Characteristics (tested in Wolfspeed application circuit)

VDD = 48 V, IDQ = 25 mA, VGS(PEAK) = –4.9 V, channel bandwidth = 3.84 MHz, 10 dB peak/average @ 0.01% CCDF

Freq

Pout

Gain

Eff

PAR

ALT1

–ALT1

ALT2

–ALT2

MHz

W

dB

%

dB

dBc

dBc

dBc

dBc

3400

39.0

14.9

54.1

8.8

–23.3

–23.1

–34.4

–34.2

3500

39.0

15.6

55.2

8.7

–24.5

–24.6

–36.2

–36.2

3600

39.0

15.6

53.9

8.3

–26.1

–26.2

–37.0

–37.0

3700

39.0

15.2

55.3

7.9

–29.4

–29.1

–39.1

–38.7

3800

39.0

14.5

50.9

6.9

–32.0

–31.8

–41.0

–40.6