Rev. 05.1, 2022-1-27

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The information in this document is subject to change without notice.

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GTVA261701FA

Package Types: H-37265J-2

Features

• GaN on SiC HEMT technology

• Input Matched

• Typical CW performance, 2690 MHz, 48 V, single side

- Output power at P

3dB = 170 W

- Efficiency = 75%

- Gain = 15 dB

• Human Body Model, Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @48 V, 40 W (CW)

output power

• RoHS-compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

170 W, 50 V, 2620 – 2690 MHz

Description

The GTVA261701FA is a 170-watt (P

3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and

a thermally-enhanced package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)

V

DD = 48 V, IDQ = 200 mA, POUT = 40 W avg, ƒ = 2690 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth,

10 dB peak/average @ 0.01% CCDF.

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

16

17

—

dB

Drain Efficiency

h

D

38

43

—

%

Adjacent Channel Power Ratio

ACPR

—

-29

-25

dBc

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-80

-60

-40

-20

0

20

40

60

80

0

4

8

12

16

20

24

28

32

27

31

35

39

43

47

51

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g261701fa-gr1a