Nexperia

74HC03; 74HCT03

Quad 2-input NAND gate; open-drain output

10. Dynamic characteristics

Table 7. Dynamic characteristics

GND = 0 V; CL = 50 pF; for test circuit, see Fig. 7.

25 °C

-40 °C to

+85 °C

-40 °C to

+125 °C

Symbol Parameter

Conditions

Min

Typ

Max

Max

Max

Unit

74HC03

nA, nB to nY; see Fig. 6

[1]

VCC = 2.0 V

-

28

95

120

145

ns

VCC = 4.5 V

-

10

19

24

29

ns

VCC = 5.0 V; CL = 15 pF

-

8

-

-

-

ns

tpd

propagation

delay

VCC = 6.0 V

-

8

16

20

25

ns

see Fig. 6

[2]

VCC = 2.0 V

-

19

75

95

110

ns

VCC = 4.5 V

-

7

15

19

22

ns

tt

transition time

VCC = 6.0 V

-

6

13

16

19

ns

CPD

power dissipation

capacitance

per package; VI = GND to VCC

[3]

-

4

-

-

-

pF

74HCT03

nA, nB to nY; see Fig. 6

[1]

VCC = 4.5 V

-

12

24

30

36

ns

tpd

propagation

delay

VCC = 5.0 V; CL = 15 pF

-

10

-

-

-

ns

tt

transition time

VCC = 4.5 V; see Fig. 6

[2]

-

7

15

19

22

ns

CPD

power dissipation

capacitance

per package; VI = GND to VCC - 1.5 V

[3]

-

4

-

-

-

pF

[1] tpd is the same as tPLZ and tPZL.

[2] tt is the same as tTHL.

[3] CPD is used to determine the dynamic power dissipation (PD in μW):

PD = CPD × VCC 2 × fi × N + Σ(CL × VCC 2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL × VCC 2 × fo) = sum of outputs.

74HC_HCT03

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 6 — 10 August 2021

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