Rev. 3.1, 2021-10-14

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

10

20

30

40

50

60

70

80

0

200

400

600

800

1000

Pout (W)

Power Sweep, Pulsed CW

VDS = 50 V, IDQ = 100 mA, 128 µs pulse width,

10% duty cycle, power optimized

Gain: 960 MHz

Gain: 1030 MHz

Gain: 1090 MHz

Gain: 1150 MHz

Gain: 1215 MHz

Eff: 960 MHz

Eff: 1030 MHz

Eff: 1090 MHz

Eff: 1150 MHz

Eff: 1215 MHz

g107001efc-gr3

High Power RF GaN on SiC HEMT

700 W, 50 V, DC - 1.4 GHz

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance (class AB), 1030 MHz,

50 V, 128 µs pulse width, 10% duty cycle

- Output power P3dB = 890 W

- Drain efficiency = 75%

- Gain = 18 dB

• Capable of withstanding a 10:1 load mismatch (all

phase angles at 700 W peak power under pulse condi-

tions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty

cycle

• Human Body Model Class IC (per ANSI/ESDA/JEDEC

JS-001)

• Pb-free and RoHS-compliant

Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high elec-

tron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

RF Characteristics

Pulsed RF Performance (tested in Wolfspeed production test fixture)

GTVA107001EC: VDD = 50 V, IDQ = 100 mA, POUT = 700 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17.5

20

22

dB

Drain Efficiency

hD

67

70

—

%

GTVA107001FC: VDD = 50 V, IDQ = 100 mA, POUT = 700 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17.5

20

22

dB

Drain Efficiency

hD

65

70

—

%

GTVA107001EC/FC

GTVA107001EC

Package H-36248-2

GTVA107001FC

Package H-37248-2