4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. P06, 2020-03-10

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

GTVA126001EC/FC

Thermally-Enhanced High Power RF GaN HEMT

600 W, 50 V, DC – 1.4 GHz

GTVA126001EC

Package H-36248-2

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance (class AB), 1200 MHz,

50 V, 300 µs pulse width, 10% duty cycle

- Output power (P3dB) = 600 W

- Drain efficiency = 65%

- Gain = 18 dB

• Capable of withstanding a 10:1 load

mismatch (all phase angles) at 600 W peak power

under pulsed conditions: 300 µs pulse width, 10%

duty cycle, VDD = 50 V, IDQ = 100 mA

• Human Body Model Class 1C (per AnSI/ESDA/JEDEC

JS-001)

• Pb-free and RoHS compliant

Description

The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high

electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy

band. They feature input matching, high efficiency, and thermally-

enhanced packages.

GTVA126001FC

Package H-37248-2

20

30

40

50

60

70

15

17

19

21

23

25

0

100 200 300 400 500 600 700 800

Output Power (W)

Power Sweep: Gain & Efficiency

50 V, IDQ = 100 mA,

300 µs pulse width, 10% duty cycle

1200 MHz

1300 MHz

1400 MHz

g126001efc-gr1

RF Characteristics

Pulsed RF Performance (tested in Wolfspeed test fixture)

VDD = 50 V, IDQ = 100 mA, POUT = 600 W, ƒ = 1400 MHz, 300 µs pulse width, 10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

19

20

22

dB

Drain Efficiency

hD

56

63

—

%