Rev. 04.2, 2022-1-27

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The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

Package Types: H-87265J-2

Thermally-Enhanced High Power RF GaN on SiC HEMT

270 W, 48 V, 2110 – 2200 MHz

Description

The GTVA212701FA is a 270-watt GaN on SiC high electron

mobility transistor (HEMT) for use in the 2110 to 2200 MHz

frequecy band. It features input matching, high efficiency,

and a thermally-enhanced earless package.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance (class AB),

2180 MHz, 48 V, 10 µs pulse width, 10% duty cycle

- Output power P

3dB = 300 W

- Drain efficiency = 68.5%

- Gain = 17.5 dB

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @ 48 V, 56.2 W

(WCDMA) output power

• Low thermal resistance

• Pb-free and RoHS-compliant

GTVA212701FA

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

g212701fa-gr1

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)

V

DD = 48 V, IDQ = 320 mA, 56.2 W average output power, ƒ = 2180 MHz. 3GPP WCDMA signal: 3.84 MHz channel bandwidth,

10 dB PAR at 0.01% CCDF.

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

18

19

—

dB

Drain Efficiency

h

D

35

38

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–26

dBc

Output PAR @ 0.01% CCDF

OPAR

6.4

7.0

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!