Rev. 02.1, 2022-1-27

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The information in this document is subject to change without notice.

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GTVA261802FC

Package Types: H-37248C-4

Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance, combined outputs,

2690 MHz, 48 V, 10 µs pulse width, 10% duty cycle

- Output power at P

3dB = 170 W

- Drain Efficiency at P

3dB = 65.5%

- Gain at P

3dB = 15 dB

• Capable of handling 10:1 VSWR @ 48 V, 180 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

170 W, 48 V, 2620 – 2690 MHz

Description

The GTVA261802FC is a 170-watt GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

V

DD = 48 V, IDQ = 160 mA, POUT = 50 W avg, ƒ = 2690 MHz, 3GPP, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

15.5

16.8

—

dB

Drain Efficiency

h

D

40

43

—

%

Adjacent Channel Power Ratio

ACPR

—

-27

-24.5

dBc

Output PAR @ 0.01% CCDF

OPAR

4.5

5.3

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

27

32

37

42

47

52

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 160 mA,

ƒ = 2690 MHz, 3GPP WCDMA signal,

PAR = 10 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtva261802fc_g1