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IXFN130N30 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXFN130N30 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IXFN130N30 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA 300 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.25mA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=65A 18 25 mΩ IGSS Gate-Source Leakage Current VGS=±20V ±200 nA IDSS Drain-Source Leakage Current VDS= 300V; VGS= 0V 100 μ A VSD Diode forward voltage IS= 100A, VGS = 0V 1.2 V PACKAGE OUTLINE Dimensions in mm |
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