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SFH4256-R Datasheet(PDF) 3 Page - ams AG

Part # SFH4256-R
Description  SIDELED® High Power Infrared Emitter (850 nm)
PDF  16 Pages
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Manufacturer  AMSCO [ams AG]
Direct Link  http://www.ams.com
Logo AMSCO - ams AG

SFH4256-R Datasheet(HTML) 3 Page - ams AG

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SFH 4256
3 Version 1.5 | 2020-08-26
Characteristics
I
F = 70 mA; tp = 20 ms; TA = 25 °C
Parameter
Symbol
Values
Peak wavelength
λ
peak
typ.
860 nm
Centroid wavelength
λ
centroid
typ.
850 nm
Spectral bandwidth at 50% I
rel,max (FWHM)
∆λ
typ.
30 nm
Half angle
φ
typ.
60 °
Dimensions of active chip area
L x W
typ.
0.2 x 0.2
mm x mm
Rise time (10% / 90%)
R
L = 50 Ω; 0
t
r
typ.
12 ns
Fall time (10% / 90%)
R
L = 50 Ω; 0
t
f
typ.
12 ns
Forward voltage 4)
V
F
typ.
max.
1.6 V
2 V
Forward voltage 4)
I
F = 500 mA; tp = 100 µs
V
F
typ.
max.
2.4 V
3 V
Reverse current 3)
V
R = 5 V
I
R
max.
10 µA
Radiant intensity 1)
I
F = 500 mA; tp = 25 µs
I
e
typ.
80 mW/sr
Total radiant flux 5)
Φ
e
typ.
40 mW
Temperature coefficient of voltage
TC
V
typ.
-0.7 mV / K
Temperature coefficient of brightness
TC
I
typ.
-0.5 % / K
Temperature coefficient of wavelength
TC
λ
typ.
0.3 nm / K
Thermal resistance junction solder point real 6)
R
thJS real
max.
280 K / W
Thermal resistance junction ambient real 7)
R
thJA
max.
500 K / W



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