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ISC015N06NM5LF Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # ISC015N06NM5LF
Description  OptiMOSTM 5 Linear FET, 60 V
PDF  12 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ISC015N06NM5LF Datasheet(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTM5LinearFET,60V
ISC015N06NM5LF
Rev.2.0,2023-06-06
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
60
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.25
3.0
3.45
V
VDS=VGS,ID=120µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.3
1.55
m
Ω
VGS=10V,ID=50A
Gate resistance
RG
-
2.0
2.6
Ω
-
Transconductance
1)
gfs
28
56
-
S
|VDS|
≥2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
6900
9000
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
1)
Coss
-
1300
1700
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
55
96
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
17
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Rise time
tr
-
16
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
31
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Fall time
tf
-
15
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
41
-
nC
VDD=30V,ID=50A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
21
-
nC
VDD=30V,ID=50A,VGS=0to10V
Gate to drain charge
1)
Qgd
-
16
24
nC
VDD=30V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
36
-
nC
VDD=30V,ID=50A,VGS=0to10V
Gate charge total
1)
Qg
-
90
113
nC
VDD=30V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.9
-
V
VDD=30V,ID=50A,VGS=0to10V
Output charge
1)
Qoss
-
91
121
nC
VDS=30V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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