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UPD6P4BGS Datasheet(PDF) 21 Page - Renesas Technology Corp |
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UPD6P4BGS Datasheet(HTML) 21 Page - Renesas Technology Corp |
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21 / 34 page ![]() Data Sheet U13594EJ2V1DS00 19 µPD6P4B AC Programming Characteristics (TA = 25 °C, VDD = 6.0 ±0.25 V, VPP = 12.5 ±0.3 V) Parameter Symbol Note1 Test Conditions MIN. TYP. MAX. Unit Address setup timeNote 2 (vs. MD0 ↓)tAS tAS 2 µs MD1 setup time (vs. MD0 ↓)tM1S tOES 2 µs Data setup time (vs. MD0 ↓)tDS tDS 2 µs Address hold timeNote 2 (vs. MD0 ↑)tAH tAH 2 µs Data hold time (vs. MD0 ↑)tDH tDH 2 µs MD0 ↑→ data output float delay time tDF tDF 0 130 ns VPP setup time (vs. MD3 ↑)tVPS tVPS 2 µs VDD setup time (vs. MD3 ↑)tVDS tVCS 2 µs Initial program pulse width tPW tPW 0.95 1.0 1.05 ms Additional program pulse width tOPW tOPW 0.95 21.0 ms MD0 setup time (vs. MD1 ↑)tMOS tCES 2 µs MD0 ↓→ data output delay time tDV tDV MD0 = MD1 = VIL 1 µs MD1 hold time (vs. MD0 ↑)tM1H tOEH tM1H+tM1R ≥ 50 µs2 µs MD1 recovery time (vs. MD0 ↓)tM1R tOR 2 µs Program counter reset time tPCR –10 µs CLK input high-, low-level width tXH, tXL – 0.125 µs CLK input frequency fX – 8 MHz Initial mode set time tI –2 µs MD3 setup time (vs. MD1 ↑)tM3S –2 µs MD3 hold time (vs. MD1 ↓)tM3H –2 µs MD3 setup time (vs. MD0 ↓)tM3SR – When program memory is read 2 µs AddressNote 2 → data output delay time tOAD tACC When program memory is read 2 µs AddressNote 2 → data output hold time tHAD tOH When program memory is read 0 130 ns MD3 hold time (vs. MD0 ↑)tM3HR – When program memory is read 2 µs MD3 ↓→ data output float delay time tDFR – When program memory is read 2 µs Reset setup time tRES –10 µs Oscillation stabilization wait timeNote 3 tWAIT –2 ms Notes 1. Equivalent symbol of the corresponding µPD27C256A (The µPD27C256A is a maintenance product.) 2. The internal address signal is incremented at the falling edge of the third clock of CLK. 3. Connect a 4 MHz ceramic resonator between the XIN and XOUT pins. |
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