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2N7002BKMB Datasheet(PDF) 4 Page - Nexperia B.V. All rights reserved |
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2N7002BKMB Datasheet(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 15 page ![]() © Nexperia B.V. 2017. All rights reserved 2N7002BKMB All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 13 June 2012 4 of 15 Nexperia 2N7002BKMB 60 V, single N-channel Trench MOSFET 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage aaa-002590 10 ID (A) 10-2 VDS (V) 10-1 102 10 1 1 10-1 limit RDSon = VDS / ID (1) (4) (5) (3) (2) Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - 305 350 K/W [2] - 150 175 K/W Rth(j-sp) thermal resistance from junction to solder point --40 K/W |
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