Nexperia

PESD4V0Z2BCDF

Extremely low clamping low capacitance ESD protection

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

-

7.4

-

V

IRM

reverse leakage current VRWM = 5 V; Tamb = 25 °C

-

1

30

nA

f = 1 MHz; VR = 0 V; Tamb = 25 °C

-

0.31

0.37

pF

Cd

diode capacitance

f = 1 MHz; VR = 1.5 V; Tamb = 25 °C

-

0.28

-

pF

IPPM = 11 A; 8/20 µs; Tamb = 25 °C

[1]

-

5.8

-

V

IPP = 8 A; TLP; tp = 100 ns

[2]

-

4.4

-

V

VCL

clamping voltage

IPP = 16 A; TLP; tp = 100 ns;

Tamb = 25 °C

[2]

-

5.7

-

V

IR = 10 A; Tamb = 25 °C

[2]

-

0.19

-

Ω

Rdyn

dynamic resistance

IR = -10 A; Tamb = 25 °C

[2]

-

0.19

-

Ω

f-3dB

-3 dB cut-off frequency Tamb = 25 °C; normalized to attenuation

at 1 MHz

-

> 9

-

GHz

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.

aaa-031915

-3

-1

1

Sdd21

(dB)

-5

f (Hz)

108

1011

1010

109

Fig. 3. Insertion loss; typical values

VI (V)

-4

4

2

-2

0

aaa-031916

0.2

0.1

0.3

0.4

Cd

(pF)

0

Fig. 4. Capacitance as a function of input voltage;

typical values

PESD4V0Z2BCDF

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Product data sheet

17 August 2020

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