 2019 Microchip Technology Inc.

DS40002077A-page 13

PIC16F1614/8

3.4

AC Characteristics

FIGURE 3-2:

HFINTOSC FREQUENCY ACCURACY OVER VDD AND TEMPERATURE

TABLE 3-4:

MEMORY PROGRAMMING REQUIREMENTS FOR PIC16F1615/9 (HIGH TEMP)

PIC16F16F1614/1618

Standard Operating Conditions (unless otherwise stated)

Operating Temperature: -40°C

TA +150°C for High Temperature

Param

No.

Symbol

Device Characteristic

Min.

Typ.†

Max.

Units

Conditions

Program Flash Memory

D121

EP

Cell Endurance

—

———

Programming the Flash memory

above +125°C is not permitted

D124

TRETD

Data Retention

—

20

—

Years

Note:

TABLE 3-5:

INTERNAL OSCILLATOR PARAMETERS FOR PIC16F1615/9 (HIGH TEMP)

PIC16F16F1614/1618

Standard Operating Conditions (unless otherwise stated)

Operating Temperature: -40°C

TA +150°C for High Temperature

Param

No.

Symbol

Device Characteristic

Frequency

Tolerance

Min.

Typ.†

Max.

Units

Conditions

OS08

HFOSC

Internal-Calibrated HFINTOSC

Frequency

——

16

—

MHz

-40°C

 TA  125°C

VDD  2.5V

+/-10%

—

16

—

MHz

-40°C

 TA  150°C

VDD  2.5V

OS09

LFOSC

Internal LFINTOSC Frequency

——

31

—

kHz

-40°C

 TA  125°C

VDD  2.5V

+/-35%

—

31

—

kHz

-40°C

 TA  150°C

VDD

 2.5V

*

These parameters are characterized but not tested.

†

Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not

tested.

Note 1: To ensure these oscillator frequency tolerances, VDD and VSS must be capacitively decoupled as close to the device as

possible. 0.1

F and 0.01 F values in parallel are recommended.

VDD (V)

150

125

85

25

0

-40

1.8

2.5

5.5

±5%

±10%

Rev. 10-000 135E

2/21/201 9

No

Operation