Preliminary Specifications

16 Mbit Multi-Purpose Flash Plus

SST39WF1601 / SST39WF1602

13

©2006 Silicon Storage Technology, Inc.

S71297-01-000

7/06

AC CHARACTERISTICS

Symbol

Parameter

SST39WF1601/1602-90

Units

Min

Max

Read Cycle Time

90

ns

Chip Enable Access Time

90

ns

Address Access Time

90

ns

Output Enable Access Time

50

ns

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output

0

ns

OE# Low to Active Output

0

ns

CE# High to High-Z Output

40

ns

OE# High to High-Z Output

40

ns

TOH1

Output Hold from Address Change

0

ns

TRP1

RST# Pulse Width

500

ns

TRHR1

RST# High before Read

50

ns

2. This parameter applies to Sector-Erase, Block-Erase and Program operations.

This parameter does not apply to Chip-Erase operations.

RST# Pin Low to Read Mode

3. This parameter is 100 µs if reset after an Erase operation.

µs

T14.0 1297

TABLE 15: Program/Erase Cycle Timing Parameters

Symbol

Parameter

Min

Max

Units

Word-Program Time

40

µs

Address Setup Time

0

ns

Address Hold Time

50

ns

WE# and CE# Setup Time

0

ns

WE# and CE# Hold Time

0

ns

OE# High Setup Time

0

ns

OE# High Hold Time

10

ns

CE# Pulse Width

50

ns

WE# Pulse Width

50

ns

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High

30

ns

CE# Pulse Width High

30

ns

Data Setup Time

50

ns

Data Hold Time

0

ns

Software ID Access and Exit Time

150

ns

Sector-Erase

50

ms

Block-Erase

50

ms

Chip-Erase

200

ms

T15.0 1297