BUJ106AX datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ106AX

Fig.7. Normalised power dissipation.

PD% = 100

⋅PD/PD

25˚C = f (Ths)

Fig.8. Typical DC current gain. h

FE = f(IC)

parameter V

Fig.9. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IB); Tj=25˚C.

Fig.10. Base-Emitter saturation voltage.

Solid lines = typ values, V

BEsat = f(IC); at IC/IB =4.

Fig.11. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IC); at IC/IB =4.

Fig.12. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

100

120

140

Ths / C

Normalised Derating

120

110

100

with heatsink compound

P tot

0.1

0.2

0.4

0.6

0.8

1.2

1.4

IC/A

VBEsat/V

0.01

0.05

0.1

0.3

IC/A

HFE

VCE = 5V

VCE = 1V

0.1

0.05

0.1

0.15

0.2

0.25

0.3

IC/A

VCEsat/V

0.01

0.1

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

IB/A

VCEsat/V

100u

10m

100

t / s

Zth / (K/W)

0.1

0.01

0.001

D=0

0.5

0.2

0.1

0.05

0.02

10u

100m

D =

BU1706AX

March 1999

Rev 2.000

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