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PMDPB85UPE

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Product data sheet

Rev. 1 — 20 June 2012

4 of 15

Nexperia

PMDPB85UPE

20 V dual P-channel Trench MOSFET

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

IDM = single pulse

Fig 3.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

aaa-003928

-1

-10-1

-10

-102

ID

(A)

-10-2

VDS (V)

-10-1

-102

-10

-1

tp = 100 μs

tp = 1 ms

tp = 10 ms

tp = 100 ms

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

-

211

243

K/W

[2]

-

93

107

K/W

in free air; t

≤ 5 s

[2]

-

5564K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

-

1215K/W