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AS4CM4EOQ Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation

Part # AS4CM4EOQ
Description  4M X 4 CMOS Quad CAS DRAM (EDO) family
PDF  16 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4CM4EOQ Datasheet(HTML) 5 Page - Alliance Semiconductor Corporation

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AS4C4M4EOQ
AS4C4M4E1Q
3/22/01; v.1.0
Alliance Semiconductor
P. 5 of 16
DC electrical characteristics (AS4LC4M4E0/E1)
Parameter
Symbol Test conditions
-50
-60
Unit
Notes
Min
Max
Min
Max
Input leakage current
IIL
0V
≤ V
in ≤ VCC (max)
Pins not under test = 0V
-5
+5
-5
+5
µ
A
Output leakage current IOL
DOUT disabled, 0V ≤ Vout ≤ VCC
(max)
-5
+5
-5
+5
µ
A
Operating power
supply current
ICC1
RAS, UCAS, LCAS, Address cycling;
tRC=min
85
75
mA
4,5
TTL standby power
supply current
ICC2
RAS = UCAS = LCAS
≥ V
IH,
all other inputs at VIH or VIL
–2.0
–2.0
mA
Average power supply
current, RAS refresh
mode or CBR
ICC3
RAS cycling, UCAS = LCAS
≥ V
IH,
tRC = min of RAS low after XCAS low.
–80–
70
mA
4
EDO page mode
average power supply
current
ICC4
RAS = VIL, UCAS or LCAS,
address cycling: tHPC = min
85
75
mA
4, 5
CMOS standby power
supply current
ICC5
RAS = UCAS = LCAS = VCC - 0.2V,
F = 0
–200
–200
µA
Output voltage
VOH
IOUT = -2.0 mA
2.4
2.4
V
VOL
IOUT = 2 mA
–0.4
–0.4
V
CAS before RAS refresh
current
ICC6
RAS, UCAS or LCAS cycling, tRC =
min
–80–
70
mA
Self refresh current
ICC7
RAS = UCAS = LCAS
≤ 0.2V,
WE = OE = VCC - 0.2V,
all other inputs at 0.2V or VCC -
0.2V
–0.3
–0.3
mA



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