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B1D08065F Datasheet(PDF) 5 Page - BASIC SEMICONDUCTOR |
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B1D08065F Datasheet(HTML) 5 Page - BASIC SEMICONDUCTOR |
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5 / 7 page ![]() SiC Schottky Diode 5 / 7 www.basicsemi.com Typical Performance Typical reverse charge as function of reverse voltage Capacitance stored energy Max. transient thermal impedance, Z thjc= f(t ), parameter: D =t / T Power dissipation as function of case temperature Figure 5 Figure 6 Figure 8 Figure 7 B1D08065F 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 VR (V) 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 TC (℃) 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 tp (s) D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 VR (V) Rev. 1.2 |
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