Nexperia

PMPB07R3EN

30 V, N-channel Trench MOSFET

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

30

-

-

V

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C

1.2

1.7

2.2

V

IDSS

drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 25 °C

-

-

1

µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

-

100

nA

IGSS

gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C

-

-

-100

nA

VGS = 10 V; ID = 12 A; Tj = 25 °C

-

7.3

8.6

mΩ

VGS = 10 V; ID = 12 A; Tj = 150 °C

-

12

14

mΩ

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 10 A; Tj = 25 °C

-

9

12

mΩ

gfs

forward

transconductance

VDS = 5 V; ID = 12 A; Tj = 25 °C

-

57

-

S

RG

gate resistance

f = 1 MHz

-

2.5

-

Ω

Dynamic characteristics

QG(tot)

total gate charge

-

13

19

nC

QGS

gate-source charge

-

2.3

-

nC

QGD

gate-drain charge

VDS = 15 V; ID = 12 A; VGS = 10 V;

Tj = 25 °C

-

1.6

-

nC

Ciss

input capacitance

-

914

-

pF

Coss

output capacitance

-

309

-

pF

Crss

reverse transfer

capacitance

VDS = 15 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

52

-

pF

td(on)

turn-on delay time

-

3

-

ns

tr

rise time

-

2

-

ns

td(off)

turn-off delay time

-

13

-

ns

tf

fall time

VDS = 15 V; ID = 12 A; VGS = 10 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

3

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 1.9 A; VGS = 0 V; Tj = 25 °C

-

0.7

1.2

V

PMPB07R3EN

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Nexperia B.V. 2023. All rights reserved

Product data sheet

18 August 2023

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