Nexperia

PMPB09R5TP

20 V, P-channel Trench MOSFET

VDS (V)

0

-4

-3

-1

-2

aaa-034926

-20

-10

-30

-40

ID

(A)

0

-2.2 V

-2.5 V

-1.8 V

VGS = -1.5 V

-4.5 V

-8 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-034927

VGS (V)

0

-1.5

-1.0

-0.5

-10-4

-10-5

-10-3

ID

(A)

-10-6

max

min

typ

Tj = 25 °C; VDS = -5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID (A)

0

-40

-30

-10

-20

aaa-034928

20

30

10

40

50

RDS(on)

(m )

0

-2.2 V

VGS = -8 V

-1.8 V

-2.5 V

-1.5 V

-4.5 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

aaa-034929

VGS (V)

0

-12

-8

-4

20

30

10

40

50

RDS(on)

(m )

0

Tj = 150 °C

Tj = 25 °C

ID = -10.5 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PMPB09R5TP

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Product data sheet

28 April 2022

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