Nexperia

PMPB09R5VP

12 V, P-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

-12

V

VGS

gate-source voltage

Tj = 25 °C

-8

8

V

VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

-15

A

VGS = -4.5 V; Tamb = 25 °C

[1]

-

-10.5

A

ID

drain current

VGS = -4.5 V; Tamb = 100 °C

[1]

-

-6.6

A

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

-

-42

A

Tamb = 25 °C; t ≤ 5 s

[1]

-

3.8

W

Tamb = 25 °C

[1]

-

1.9

W

Ptot

total power dissipation

Tsp = 25 °C

-

12.5

W

Tj

junction temperature

-55

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

Source-drain diode

IS

source current

Tamb = 25 °C

[1]

-

-1.8

A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.

Tamb (°C)

-75

175

125

25

75

-25

aaa-030137

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a

function of ambient temperature

Tamb (°C)

-75

175

125

25

75

-25

aaa-030138

40

80

120

Ider

(%)

0

Fig. 2. Normalized continous drain current as a

function of ambient temperature

PMPB09R5VP

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Product data sheet

10 February 2021

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