DMN68M7SCT

Document number: DS40859 Rev. 7 - 2

2 of 7

www.diodes.com

December 2019

© Diodes Incorporated

DMN68M7SCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

68

V

Gate-Source Voltage

VGSS

20

V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TC = +25°C

TC = +70°C

ID

100

80

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

400

A

Pulsed Source Current (10

μs Pulse, Duty Cycle = 1%)

ISM

400

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

100

A

Avalanche Current (Note 6) L = 0.3mH

IAS

35

A

Avalanche Energy (Note 6) L = 0.3mH

EAS

183

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

TC = +25°C

TC = +70°C

PD

125

80

W

Thermal Resistance, Junction to Case (Note 5)

RθJC

1.0

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

68

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 68V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.3

—

3

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

6.2

8.0

m

Ω

VGS = 10V, ID = 20A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

4260

—

pF

VDS = 30V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

430

—

Reverse Transfer Capacitance

Crss

—

198

—

Gate Resistance

RG

—

1.75

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 10V)

QG

—

72.9

—

nC



VDD = 30V, ID = 20A

Total Gate Charge (VGS = 4.5V)

QG

—

36.0

—

Gate-Source Charge

QGS

—

8.0

—

Gate-Drain Charge

QGD

—

15.3

—

Turn-On Delay Time

tD(ON)

—

6.3

—

ns

VDD = 30V, VGS = 10V,

RG = 1Ω, ID = 20A

Turn-On Rise Time

tR

—

18

—

Turn-Off Delay Time

tD(OFF)

—

36

—

Turn-Off Fall Time

tF

—

9.7

—

Reverse Recovery Time

tRR

—

31.4

—

ns

IF = 20A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

30.1

—

nC

Notes:

5. Device mounted on infinite heatsink.

6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.