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B1D30120HC Datasheet(PDF) 2 Page - BASIC SEMICONDUCTOR |
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B1D30120HC Datasheet(HTML) 2 Page - BASIC SEMICONDUCTOR |
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2 / 7 page ![]() Rev. 0.2 www.basicsemi.com 2 / 7 Maximum Ratings (TC=25℃ unless otherwise specified) SiC Schottky Diode B1D30120HC Symbol Parameter Test conditions Value Unit VRRM Repetitive peak reverse voltage 1200 V VRSM Non-repetitive peak reverse voltage 1200 V IF Continuous forward current TC=25°C TC=160°C 59*/118** 15*/30** A IFSM Non-repetitive forward surge current TC=25°C , tp=10ms, Half Sine Wave 135* A ∫ i 2dt i2t value TC=25°C ,tp=10ms 91* A2S Ptot Power dissipation TC=25°C TC=110°C 286* 124* W Tj Operating junction temperature - 55~175 °C Tstg Storage temperature - 55~175 °C TO-247 mounting torque M3 Screw 0.7 Nm * Per Leg, ** Per Device Thermal Characteristics Symbol Parameter Value Unit Min. Typ. Max. Rth(jc) Thermal resistance from junction to case 0.52* 0.26** K/W * Per Leg, ** Per Device |
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