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UF601ZQL-AE2-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UF601ZQL-AE2-R
Description  0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF601ZQL-AE2-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UF601ZQ
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R205-666.F
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
600
V
Drain-Gate Voltage (Note 2)
VDGX
600
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
0.185
A
Pulsed
IDM
0.740
A
Power Dissipation
PD
0.50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
250
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=-5.0V
600
V
Drain-Source Leakage Current
ID(OFF)
VDS=600V, VGS=-5.0V
0.1
μA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+10
μA
Reverse
VGS=-20V, VDS=0V
-10
μA
ON CHARACTERISTICS
Gate to Source Cut Off Voltage
VGS(OFF)
VDS=3V, ID=8µA
-1.0
-3.0
V
Drain-Source Leakage Current
IDSS
VDS=25V, VGS=0V
7
mA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=0V, ID=3.0mA
700
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=-5V, VDS=25V, f=1.0MHz
12.4
pF
Output Capacitance
COSS
7.5
pF
Reverse Transfer Capacitance
CRSS
4.3
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=30V, VGS=-5~5V, ID=5mA
(Note 1, 2)
0.144
nC
Gate to Source Charge
QGS
0.05
nC
Gate to Drain Charge
QGD
0.03
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, VGS=-5~5V, ID=5mA,
RG=20Ω (Note 1, 2)
40
ns
Rise Time
tR
44
ns
Turn-OFF Delay Time
tD(OFF)
100
ns
Fall-Time
tF
180
μs
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=3mA , VGS=-10V
1.4
V
Notes: 1. Pulse Test: Pulse width ≤ 380μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.



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