UTT50N06H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R209-208.D



ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

60

V

Drain-Source Leakage Current

IDSS

VDS=60V, VGS=0V

1

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

nA

Reverse

VGS=-20V, VDS=0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=25A

12

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

2350

pF

Output Capacitance

COSS

235

pF

Reverse Transfer Capacitance

CRSS

165

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

QG

VDS=48V, VGS=10V, ID=50A

58

nC

Gate to Source Charge

QGS

15

nC

Gate to Drain Charge

QGD

19

nC

Turn-ON Delay Time (Note 1)

tD(ON)

VDD=30V, VGS=10V, ID=50A,

RG=3Ω

12

ns

Rise Time

tR

18

ns

Turn-OFF Delay Time

tD(OFF)

33

ns

Fall-Time

tF

21

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

50

A

Maximum Body-Diode Pulsed Current

ISM

100

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=50A, VGS=0V

1.2

V

Body Diode Reverse Recovery Time (Note 1)

trr

IS=30A, VGS=0V,

dIF/dt=100A/µs

28

nS

Body Diode Reverse Recovery Charge

Qrr

15

nC

Notes: 1. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%.

2. The power dissipation is limited by 150°C junction temperature.