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B2D20120HC Datasheet(PDF) 1 Page - BASIC SEMICONDUCTOR |
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B2D20120HC Datasheet(HTML) 1 Page - BASIC SEMICONDUCTOR |
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1 / 7 page ![]() Rev. 0.1 www.basicsemi.com 1 / 7 SiC Schottky Diode VRRM = 1200 V IF (TC=155°C) = 20 A** QC = 104 nC** Features ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge B2D20120HC Benefits ⚫ Essentially no switching losses ⚫ System efficiency improvement over Si diodes ⚫ Increased power density ⚫ Enabling higher switching frequency ⚫ Reduction of heat sink requirements ⚫ System cost savings due to smaller magnetics ⚫ Reduced EMI Applications ⚫ Switch mode power supplies (SMPS) ⚫ Uninterruptible power supplies ⚫ Motor drivers ⚫ Power factor correction ⚫ Pin1- Anode ⚫ Pin2- Cahtode ⚫ Pin3- Anode Package Pin Definitions Package Parameters Part Number Marking Package B2D20120HC B2D20120HC TO-247-3 * Per Leg, ** Per Device 2 3 1 CASE 3 2 TO-247-3 CASE 1 |
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