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SST11LP12 Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST11LP12 Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 17 page ![]() ©2006 SST Communications Corp. S71278-01-000 1/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Preliminary Specifications FEATURES: • High Gain: – Typically 35 dB gain across 4.9-5.8 GHz over temperature 0°C to +85°C • High linear output power: – ~28 dBm P1dB (Pulsed single-tone signal) – Meet 802.11a OFDM ACPR requirement up to 23+ dBm over ~ entire band – Added EVM~4% up to 21 dBm for 54 Mbps 802.11a signal • High power-added efficiency/Low operating current for 54 Mbps 802.11a applications –~12% @ POUT = 21 dBm for 54 Mbps • Built-in Ultra-low IREF power-up/down control –IREF <3 mA • Low idle current – ~130 mA ICQ • High speed power up/down – Turn on/off time (10%~90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • High temperature stability – ~1.5/1.0 dB gain/power variation between 0°C to +85°C – ~1 dB detector variation over 0°C to +85°C • Low shut-down current (< 0.1 µA) • On-chip power detection • 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 16-contact WQFN (3mm x 3mm) – Non-Pb (lead-free) packages available APPLICATIONS: • WLAN (IEEE 802.11a) •Japan WLAN • HyperLAN2 • Multimedia PRODUCT DESCRIPTION The SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb power-added effi- ciency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.8 GHz). It typically provides 35 dB gain with 16% power- added efficiency @ POUT = 23 dBm. The SST11LP12 has excellent linearity, typically ~4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spec- trum mask at 23+ dBm. SST11LP12 also has wide-range (>20 dB), temperature-stable (~1 dB over 85°C), single- ended/differential power detectors which lower users’ cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra- low reference current (total IREF <3 mA) makes the SST11LP12 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11LP12 ideal for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applications. The SST11LP12 is offered in 16-contact WQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 SST1LP124.9-5.8 GHz High-Linearity Power Amplifier |
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