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B2D30120H1 Datasheet(PDF) 1 Page - BASIC SEMICONDUCTOR |
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B2D30120H1 Datasheet(HTML) 1 Page - BASIC SEMICONDUCTOR |
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1 / 7 page ![]() 2 1 SiC Schottky Diode V RRM 1200 V 30 A 172 nC I F (TC=150°C) Q C Package: TO-247-2 Product Summary 2 1 backside Features Pin1 and backside - Cathode Pin2- Anode Package Pin Definitions Package Parameters 1 / 7 www.basicsemi.com Part Number Marking Package B2D30120H1 B2D30120H1 TO-247-2 Electrical Connection B2D30120H1 Features Benefits Low leakage current (I R) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on V F High surge current capacity Low capacitive charge System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction Solar Enabling higher frequency Reduced EMI Applications Rev. 0.3 |
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