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STP62NS04Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP62NS04Z
Description  N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP62NS04Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP62NS04Z
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
Clamped
V
VGS
Gate-source voltage
Clamped
V
ID
Drain current (continuous) at TC = 25°C
62
A
ID
Drain current (continuous) at TC=100°C
37.5
A
IDG
Drain gate current (continuous)
± 50
IGS
Gate sourcecurrent (continuous)
± 50
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
248
A
PTOT
Total dissipation at TC = 25°C
110
W
Derating factor
0.74
W/°C
dv/dt (2)
2.
ISD ≤40A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
8
V/ns
EAS
(3)
3.
Starting TJ = 25
oC, I
D = 20A, VDD = 20V
Single Pulse Avalanche Energy
500
mJ
VESD
ESD (HBM - C = 100pF, R = 1.5 k
Ω)8
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case Max
1.36
°C/W
RthJA
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C



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