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2STW1695 Datasheet(PDF) 1 Page - STMicroelectronics |
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2STW1695 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  February 2007 Rev 3 1/9 9 2STW1695 High power PNP epitaxial planar bipolar transistor General features ■ High breakdown voltage VCEO = -140V ■ Complementary to 2STW4468 ■ Typical ft =20MHz ■ Fully characterized at 125 oC ■ In compliance with the 2002/93/EC European Directive Applications ■ Audio power amplifier Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Order codes Internal schematic diagram TO-247 1 2 3 Part Number Marking Package Packing 2STW1695 2STW1695 TO-247 Tube www.st.com |
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