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PSMN2R2-30YLC

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Product data sheet

Rev. 02 — 3 May 2011

7 of 15

Nexperia

PSMN2R2-30YLC

N-channel 30 V 2.15m

Ω logic level MOSFET in LFPAK using NextPower

Qoss

output charge

VGS =0 V; VDS =15V; f=1MHz;

Tj =25°C

-

18.4

-

nC

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj =25°C;

see Figure 17

-0.8

1.1

V

trr

reverse recovery time

IS =25A; dIS/dt = -100 A/µs;

VGS =0 V; VDS =15V

-37

-ns

Qr

recovered charge

-

37

-

nC

ta

reverse recovery rise time

VGS =0 V; IS =25 A;

dIS/dt = -100 A/µs; VDS =15V;

see Figure 18

-21

-ns

tb

reverse recovery fall time

-

16

-

ns

Table 7.

Characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 6.

Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003a a f 888

0

20

40

60

80

100

0

0.5

1

1.5

2

VDS (V)

ID

(A)

VGS (V) =

2.6

2.8

3.0

4.5

10

2.4

2.2

003a a f 889

0

2

4

6

8

0

4

8

12

16

VGS (V)

RDSon

(m

Ω)