MJD3055 datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

6.25

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current

(VBE = -1.5 V)

VCE = 70 V

Tj = 150

µA

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 70 V

Tj = 150

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 30 V

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

0.5

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 4 A

IB = 0.4 A

IC = 10 A

IB = 3.3 A

1.1

VBE(on)

∗ Base-Emitter Voltage

IC = 4 A

VCE = 4 V

1.8

hFE

∗

DC Current Gain

IC = 4 A

VCE = 4 V

IC = 10 A

VCE = 4 V

100

Transition Frequency

IC = 0.5 A

VCE = 10 V f = 500 KHz

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP type voltage and current values are negative.

Safe Operating Area

Derating Curves

MJD2955 / MJD3055

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