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STV160NF02LA Datasheet(PDF) 1 Page - STMicroelectronics |
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STV160NF02LA Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  1/8 December 2000 STV160NF02LA N-CHANNEL 20V - 0.0018 Ω - 160A PowerSO-10 STripFET™ POWER MOSFET (1) VDD = 35V, ID = 45A, RG = 22Ω , L = 330µH, Starting Tj=25°C (**)Limited only maximum junction temperature allowed by PowerSO-10 s TYPICAL RDS(on) = 0.0018 Ω s LOW THRESHOLD DRIVE s ULTRA LOW ON-RESISTANCE s ULTRA FAST SWITCHING s 100% AVALANCHE TESTED s VERY LOW GATE CHARGE s LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE DESCRIPTION The STV160NF02LA represents the second gen- eration of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also trans- lates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DC- DC CONVERTERS ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area Note: Marking will be STV160NF02AL TYPE VDSS RDS(on) ID STV160NF02LA 20 V < 0.0027 Ω 160 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 20 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 20 V VGS Gate- source Voltage ± 15 V ID(**) Drain Current (continuos) at TC = 25°C 160 A ID Drain Current (continuos) at TC = 100°C 113 A IDM (q) Drain Current (pulsed) 640 A PTOT Total Dissipation at TC = 25°C 210 W Derating Factor 1.4 W/°C EAS (1) Single Pulse Avalanche Energy 330 mJ Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C PowerSO-10 1 10 INTERNAL SCHEMATIC DIAGRAM CONNECTION DIAGRAM (TOP VIEW) |
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