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STP130NS04ZB Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP130NS04ZB
Description  N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP130NS04ZB Datasheet(HTML) 3 Page - STMicroelectronics

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STP130NS04ZB-STB130NS04ZB-STW130NS04ZB-STB130NS04ZB-1
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
clamped
V
VGS
Gate-source voltage
clamped
V
ID
Drain current (continuous) at TC = 25°C
80
A
ID
Drain current (continuous) at TC = 100°C
60
A
IDG
Drain gate current (continuous)
± 50
mA
IGS
Gate source current (continuous)
± 50
mA
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25°C
300
W
Derating factor
2.0
W/°C
VESD(G-S)
Gate-source ESD(HBM-C=100 pF, R=1.5
K
Ω)
4KV
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 2.
Thermal data
TO-220
D²PAK/I²PA
K
TO-247
Unit
Rthj-case
Thermal resistance junction-case Max
0.50
°C/W
Rthj-pcb(1)
1.
When mounted on 1 inch² FR4 2oZ Cu
Thermal resistance junction-pcb
Max
35
°C/W
Rthj-a
Thermal resistance junction-ambient
Max
62.5
50
Tl
(2)
2.
(1.6 mm from case, for 10 sec)
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
80
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=30V)
500
mJ



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