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IXFN280N085 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IXFN280N085
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN280N085 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IXFN280N085
·
DESCRIPTION
·
Drain Current -ID= 280A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 85V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 4.4mΩ(Max)@VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
DC-DC converter, Battery Chargers, High speed power switch.
·
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
85
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
280
A
IDM
Pulse Drain Current
1120
A
PD
Total Dissipation@TC=25℃
700
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.18
℃
/W
D
G
S
S
SOT-227 package


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