D90N02L datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STD90N02L - STD90N02L-1

4/17

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 3.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 25mA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20V,

VDS = 20V,Tc = 125°C

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

11.8

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 30A

VGS= 5V, ID= 15A

0.0052

0.007

0.006

0.011

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward

transconductance

VDS =10V, ID = 18A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =16V, f=1MHz, VGS=0

2050

545

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=10V, ID = 60A

VGS =5V

(see Figure 15)

7.7

3.5

Gate input resistance

f=1MHz Gate DC Bias =0

test signal level =20mV

open drain

0.5

1.5

Ω

QOSS

(2)

Qoss.= Coss * D Vin, Coss = Cgd + Cgd. (see Appendix A)

Output charge

VDS =10V, VGS =0V

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