STGF10NB60SD datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STGF10NB60SD

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test condictions

Min.

Typ.

Max. Unit

VBR(CES)

Collector-emitter breakdown

voltage

IC = 250µA, VGE = 0

600

VBR(CES)

Collector-emitter breakdown

voltage

IC = 1mA, VGE = 0

VCE(SAT)

Collector-emitter saturation

voltage

VGE =15V, IC = 5A, Tj= 25°C

VGE =15V, IC = 10A, Tj= 25°C

VGE =15V, IC = 10A, Tj= 125°C

1.15

1.35

1.25

1.8

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250µA

2.5

ICES

Collector-emitter leakage

current (VCE = 0)

VCE = Max rating ,Tj =25 °C

VCE = Max rating ,Tj =125 °C

100

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20V , VCE = 0

±100

gfs

Forward transconductance

VCE = 25 V , IC =10 A

Table 4.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1 MHz, VGE= 0

610

Total gate charge

VCE = 400V, IC = 10 A,

VGE = 15V

ICL

Turn-off SOA minimum

current

Vclamp= 480V, RG= 1kΩ,

Tj= 125°C

STGF10NB60SD Datasheet(PDF) 4 Page - STMicroelectronics

STGF10NB60SD Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL