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STGW35NB60SD Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGW35NB60SD
Description  N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW35NB60SD Datasheet(HTML) 5 Page - STMicroelectronics

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STGW35NB60SD
2 Electrical characteristics
5/13
Table 7.
Collector-emitter diode
(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current
(4) Calculated according to the iterative formula:
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Vf
Forward On-Voltage
If = 10A
If = 10A, Tj = 125°C
1.3
1
2V
V
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
If = 20A, VR = 40V,
Tj = 25°C, di/dt = 100A/µs
(see Figure 19)
44
32
66
3
0.375
ns
ns
nC
A
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
If = 20A, VR = 40V,
Tj = 125°C, di/dt = 100A/µs
(see Figure 19)
88
56
237
5.4
0.57
ns
ns
nC
A
I
C
T
C
()
T
JMAX
T
C
–
R
THJ
C
–
V
CESAT MAX
() TC IC
,
()
×
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