DAP005TR datasheet(9/39 Pages) STMICROELECTRONICS

9 / 39 page

DAP005

Electrical characteristics

9/39

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

Zero current detector

VZCDH

Upper clamp voltage

IZCD = 2.5 mA

5.0

5.7

6.5

VZCDL

Lower clamp voltage

IZCD = - 2.5 mA

-0.3

0.3

VZCDA

Arming voltage

(positive-going edge)

(4)

1.4

VZCDT

Triggering voltage

(negative-going edge)

(4)

0.7

IZCDb

Input bias current

VZCD = 1 to 4.5 V

1µA

IZCDsrc

Source current capability

-2.5

IZCDsnk

Sink current capability

2.5

Tracking boost function

∆V

Dropout voltage

VVFF - VTBO

ITBO = 0.25 mA

ITBO

Linear operation

0.25

IINV - ITBO current

mismatch

ITBO = 25 µA to 0.25 mA

-3.5

3.5

VTBOclamp Clamp voltage

(2) V

VFF = 4V

2.92

3.1

PFC_OK

Vthl

Latch-off threshold

(2) Voltage rising

2.4

2.5

2.6

Vth

Disable threshold

(2) Voltage falling

0.2

VEN

Enable threshold

(2) Voltage rising

0.26

IPFC_OK

Input bias current

VPFC_OK = 0 to 2.5V

-0.1

-1

µA

Vclamp

Clamp voltage

IPFC_OK = 1 mA

99.5

PWM_LATCH

Ileak

Low level leakage

current

VPWM_LATCH=0

-1

µA

High level

IPWM_LATCH = -0.5 mA

3.7

IPWM_LATCH = -0.05 mA

4.7

PWM_STOP

Ileak

High level leakage

current

VPWM_STOP = 6V

1µA

Low level

IPWM_STOP = 0.5 mA

Vclamp

Clamp voltage

IPFC_OK = 2 mA

99.5

Table 5. Electrical characteristics (continued)

( -25°C < TJ < +125°C, VCC = 12V, Co = 1nF between pin GD and GND, CFF =1µF between pin VFF

and GND; unless otherwise specified)

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