DMN2040U

Document number: DS40476 Rev. 3 - 2

2 of 7

www.diodes.com

March 2018

© Diodes Incorporated

DMN2040U

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

6.0

4.8

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

1.6

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

30

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

0.8

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

159

°C/W

Total Power Dissipation (Note 6)

PD

1.36

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

92

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

20

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

—

1.0

µA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note7)

Gate Threshold Voltage

VGS(TH)

0.5

—

1.2

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

21

25

m



VGS = 4.5V, ID = 8.2A

26

33

VGS = 2.5V, ID = 3.3A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

667

—

pF

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

91

—

pF

Reverse Transfer Capacitance

Crss

—

83

—

pF

Gate Resistance

Rg

—

1.2

—



VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg

—

7.5

—

nC

VGS = 4.5V, VDS = 10V,

ID = 8.2A

Gate-Source Charge

Qgs

—

0.8

—

nC

Gate-Drain Charge

Qgd

—

2.5

—

nC

Turn-On Delay Time

tD(ON)

—

3.9

—

ns

VDD = 10V, VGS = 4.5V,

RL = 10, Rg = 6

Turn-On Rise Time

tR

—

5.1

—

ns

Turn-Off Delay Time

tD(OFF)

—

21

—

ns

Turn-Off Fall Time

tF

—

9.4

—

ns

Reverse Recovery Time

tRR

—

12

—

ns

IF = 5.0A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

3.4

—

nC

IF = 5.0A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.